Raman Piezospectroscopy of Phonons in Bulk 6H-SiC

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Self-organization in porous 6H–SiC

Self-organization in porous 6H–SiC" (2000). Faculty Publications from the Department of Electrical and Computer Engineering. 7.

Shockley-Frank stacking faults in 6H-SiC

Simulation and Validation of Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer

We report the utilization of key design parameters to simulate, batch-fabricate and evaluate first-generation single crystal 6H-SiC piezoresistive accelerometers for extreme impact, high electromagnetic fields (EM) and high temperature applications. The results from finite element analysis (FEA) of the selected design models were compared to evaluated prototypes. While FEA results predicted saf...

Effect of Impurities on the Raman Scattering of 6H-SiC Crystals

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Aland B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be ind...